bias resistor transistor npn silicon DTD123Y http://www.weitron.com.tw weitron collector emitter base r 1 r 2 sot-23 1 1 2 3 2 3 l e a d( p b)- f r ee p b 1/3 25-apr-08 paramete r symbo l mi n typ ma x uni t conditions v i (off) 0.3 v i a m 0 2 = o i , v 3 . 0 = o v 2 ) n o ( output voltag e vo(on) 0.1 0. 3 v io/i i = 50 ma/2.5 ma input curren t i i 3. 6 m a = 5v output curren t io(off) 0. 5 a vcc = 50v,v = 0v a m 0 5 = o i , v 5 = o v 6 5 e f h n i a g t n e r r u c c d input resistanc e r 1 1.5 4 2. 2 2.8 6 k resistance rati o r 2 /r 1 3. 6 4. 5 5.5 transition frequenc y f t 20 0 mh z v ce = 10v,i e = -500m a,f = 100mh z * * transition frequency of the device device marking : f62 v input voltage electrical characteristics (t a = 25oc) paramete r symbo l limit s unit supply voltage vcc 5 0 v input voltag e v in 5~+12 v output curren t i c 50 0 ma power dissipatio n p d 20 0 mw junction temperatur e t j 150 storage temperatur e tst g 55~+150 absolute maximum ratings (t a = 25oc) - - - - - - - - - - - - - - - - - v i i vcc = 5v,io = 100a
weitron http://ww w .weitron.com.tw 2 / 3 DTD123Y 25-apr-08
DTD123Y weitron http://w w w .weitron.com.tw 3 / 3 25-apr-08 sot -23 outline dimensions unit:mm a b d e g m l h j t op view dim a b c d e g h j k l m min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 k c
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